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| (R) TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ase 25 o C T amb 25 o C Storage Temperature Max. Operating Junction Temperature TIP31A TIP32A 60 60 T IP32B 80 80 5 3 5 1 40 2 -65 to 150 150 Value TIP31C TIP32C 100 100 V V V A A A W W o o Un it C C For PNP types voltage and current values are negative October 1999 1/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CEO I CES Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (I C = 0) Test Con ditions for T IP31A/32A for T IP31C/32B/32C for T IP31A/32A for T IP/ 32B for T IP31C/32C V EB = 5 V I C = 30 mA for TIP31A/32A for TIP32B for TIP31C/32C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0.5 A I C = 0.5 A I B = 375 mA V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V f = 1 KHz V CE = 10 V f = 1 MHz 25 10 20 3 V CE = 30 V V CE = 60 V V CE = 60 V VCE = 80 V V CE = 100 V Min. Typ. Max. 0.3 0.3 0.2 0.2 0.2 1 Unit mA mA mA mA mA mA IEBO V CEO(s us) Collector-Emitt er Sustaining Voltage (I B = 0) V CE(sat) V BE(on) h FE h fe Collector-Emitt er Saturation Voltage Base-Emitter Voltage DC Current G ain Small Signall Current Gain 60 80 100 1.2 1.8 50 V V V V V Pulsed : pulse duration = 300 s, duty cycle 2% For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 4/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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